IRFB38N20DPBF:MOSFT 200V 44A 54mOhm 60nC
Key Parameters
VDS
200
V
VDS(Avalanche)min.
260
V
RDS(ON)max @ 10V
54
mΩ
TJ max
175
℃
IRFB38N20DPBF Infineon Electronic Components Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses •
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) •
Fully Characterized Avalanche Voltage and Current •
Lead-Free
Product Applications
High frequency DC-DC converters
Plasma Display Panel
Keyword: components of circuits